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Sn-based Group-IV Semiconductors on Si: New Infrared Materials and New Templates for Mismatched Epitaxy

Published online by Cambridge University Press:  01 February 2011

John Tolle ,
Radek Roucka ,
Vijay D'Costa ,
Jose Menendez ,
Andrew Chizmeshya  and
John Kouvetakis
John Tolle
Affiliation:
[email protected]
Radek Roucka
Affiliation:
[email protected]
Vijay D'Costa
Affiliation:
Vijay.D'[email protected]
Jose Menendez
Affiliation:
[email protected]
Andrew Chizmeshya
Affiliation:
[email protected]
John Kouvetakis
Affiliation:
[email protected], Arizona State University, Chemistry, United States
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Abstract

We report growth and properties of GeSn and SiGeSn alloys on Si (100). These materials are prepared using a novel CVD approach based on reactions of Si-Ge hydrides and SnD4. High quality GeSn films with Sn contents up to 20%, and strain free microstructures have been obtained. The lattice mismatch between the films and Si is relieved by Lomer edge dislocations located at the interface. This material is of interest due to the predicted cross-over to a direct gap semiconductor for moderate Sn concentrations. We find that the direct band gap, and, consequently, the main absorption edge, shifts monotonically to lower energies as the Sn concentration is increased. The compositional dependence of the direct band gap shows a strong bowing, such that the direct band gap is reduced to 0.4 eV (from 0.8 eV for pure Ge) for a concentration of 14% Sn. The ternary SiGeSn alloy has been grown for the first time on GeSn buffer layers. This material opens up entirely new opportunities for strain and band gap engineering using group-IV materials via decoupling of strain and composition. Our SiGeSn layers have lattice constants above and below that of pure Ge, and depending on the thickness and composition of the underlying buffer layer they can be grown relaxed, with compressive, or with tensile strain. In addition to acting as a buffer layer for the growth of SiGeSn, we have found that GeSn can act as a template for the subsequent growth of a variety of materials, including III-V semiconductors.

Keywords

chemical vapor deposition (CVD) (deposition)Sielectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE12-08
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Jenkins, W. and Dow, J. D., Phys. Rev. B 36, 7994 (1987).10.1103/PhysRevB.36.7994Google Scholar
2. Roucka, R., Tolle, J., Cook, C., Costa, V.J., Chizmeshya, A.V.G., Menendez, J., Zollner, S., and Kouvetakis, J., Appl. Phys. Lett. 86(19), 191912/1–191912/3 (2005).Google Scholar
3. Gurdal, O., Hasan, M.-A., Sardela, M.R. Jr, Greene, J.E., Appl. Phys. Lett. 67, 956 (1995).10.1063/1.114707Google Scholar
4. He, G., Atwater, H.A., Phys. Rev. Lett. 79, 1937 (1997).10.1103/PhysRevLett.79.1937Google Scholar
5. Bauer, M.R., Taraci, J., Tolle, J., Chizmeshya, A.V.G., Zollner, S., Smith, D.J., Menendez, J., Hu, C.H., Kouvetakis, J., App. Phys. Lett. 81, 2992 (2002).Google Scholar
6. Chizmeshya, A.V.G., Bauer, M. and Kouvetakis, J., Chem. Mater. 15, 2511–2519 (2003).Google Scholar
7. Bauer, M. R., Tolle, J., Bungay, C., Chizmeshya, A.V.G., Smith, D. J., Menendez, J., and Kouvetakis, J., Solid State Commun. 127, 355–359 (2003).Google Scholar
8. Aella, P., Cook, C., Tolle, J., Zollner, S., Chizmeshya, A. V. G., and Kouvetakis, J., Appl. Phys. Lett. 84, 888–890 (2004).Google Scholar