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Selective Deposition of N+ Doped MC-SI:H:F by Rf Plasma Cvd on Si and S1O2 Substrates

Published online by Cambridge University Press:  21 February 2011

K. Baert ,
P. Deschepper ,
H. Pattyn ,
J. Nijs  and
R. Mertens
K. Baert
Affiliation:
I.M.E.C. Kapeldreef 75, 3030 Heverlee, Belgium
P. Deschepper
Affiliation:
I.M.E.C. Kapeldreef 75, 3030 Heverlee, Belgium
H. Pattyn
Affiliation:
I.M.E.C. Kapeldreef 75, 3030 Heverlee, Belgium
J. Nijs
Affiliation:
I.M.E.C. Kapeldreef 75, 3030 Heverlee, Belgium
R. Mertens
Affiliation:
I.M.E.C. Kapeldreef 75, 3030 Heverlee, Belgium
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Abstract

μc-Si:H:F can be deposited by if plasma-CVD of fluorinated gas sources like SiF4 and SiH2F2, mixed with H2 and/or SiH4. However, this growth process is usually not selective: the layers are deposited on SiO2 as well as on Si substrates. In this paper, selective growth from SiF4 + SiH4 is reported. N+ Si layers were deposited on <100> Si and poly-Si with a conductivity up to 300 resp. 100 S/cm. The selective growth process was applied for Source and Drain regions of poly-Si thin film transistors on insulating substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 359
Copyright
Copyright © Materials Research Society 1990

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