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Scanning Tunneling Microscopy Imaging of Defects in Layered Compounds

Published online by Cambridge University Press:  26 February 2011

G. P. E. M. Van Bakell ,
J. Th. M. De Hosson  and
T. Hibma
G. P. E. M. Van Bakell
Affiliation:
Department Of Applied Physics, University of Groningen, Materials Science Centre, Nijenborgh 18, 9747 AG Groningen, The Netherlands.
J. Th. M. De Hosson
Affiliation:
Department Of Applied Physics, University of Groningen, Materials Science Centre, Nijenborgh 18, 9747 AG Groningen, The Netherlands.
T. Hibma
Affiliation:
Laboratory of Inorganic Chemistry, University of Groningen, Materials Science Centre, Nijenborgh 16, 9747 AG Groningen, The Netherlands
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Abstract

Structural features of TiS2 were studied by scanning tunneling microscopy (STM) and single-crystal X-ray diffraction was applied as a complementary technique. STM images in air and at room temperature revealed, beside the trigonal symmetry of the lattice, several new features having this symmetry as well. We conclude that these features not only are to be described by structural defect phenomena which affect octahedral sites in the 1T-CdI2 structure but tetrahedral sites as well. Sample orientation determination by X-ray diffraction provides a unique relation between feature types and sites. A model is proposed in which displaced Ti atoms account for the observed features.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 605
Copyright
Copyright © Materials Research Society 1991

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References

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