Hostname: page-component-7bb8b95d7b-qxsvm Total loading time: 0 Render date: 2024-09-30T03:39:19.700Z Has data issue: false hasContentIssue false
  • English
  • Français

Role of Si1−xGex Buffer Layer in Determining Electrical Characteristics of Modulation-Doped p-Si0. 5Ge0.5/Ge/Si1−xGex Heterostructures

Published online by Cambridge University Press:  28 February 2011

Eiichi Murakami ,
Hiroyuki Etoh ,
Akio Nishida ,
Kiyokazu Nakagawa  and
Masanobu Miyao
Eiichi Murakami
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Hiroyuki Etoh
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Akio Nishida
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Kiyokazu Nakagawa
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Masanobu Miyao
Affiliation:
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Get access

Abstract

Electrical characteristics of modulation-doped p-Si0.5Ge0.5/Ge/Si1−x Gex heterostructures are examined in relation to Si fraction (1−X) and thickness (dB)of the buffer layer (Si1−xGex), using Raman spectroscopy and transmission electron microscopy. Strain-induced enhancement of hole mobility and concentration is observed in 1-X≦0.25. However, their decrease in 1-X≦0.25 and for small dB values is also observed, which is attributed to the increase in threading dislocations. As a result, a maximum hole mobility of 7600 cm2/Vs at 77 K is obtained at 1-X=0.25 and dB=1μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 491
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Iyer, S.S., Patton, G.L., Stork, J.M.C., Meyerson, B.S. and Harame, D.L., IEEE Trans. Electron Devices, ED–36, 2043, (1989).Google Scholar
2. Bean, J.C., in Silicon-Molecular Beam Epitaxy, edited by Kasper, E. and Bean, J.C. (CRC press, Florida, 1988) Vol.2, Chap. 11.Google Scholar
3. People, R., IEEE Trans. Quantum Electronics, QE–22, 1696, (1986).Google Scholar
4. Murakami, E., Etoh, H., Nakagawa, K., and Miyao, M., Extended Abstracts of the 21st Conference on Solid State Devices and Materials, Tokyo,1989, p. 373.Google Scholar
5. Miyao, N., Murakami, E., Etoh, H., and Nakagawa, K., presented at the 1989 MRS Fall Meeting, Boston, MA, 1989 (unpublished).Google Scholar
6.ibid 2. p. 102.Google Scholar
7. People, R., Bean, J.C., Lang, D.V., Sergent, A.M., Stormer, H.L., Wecht, K.W., Lynch, R.T., and Baldwin, K., Appl. Phys. Lett. 45, 1231, (1984).Google Scholar
8. Cerdeira, F., Pinczuk, A., Bean, J.C., Batlogg, B., and Cardona, N., Appl. Phys. Lett. 45, 1138, (1984).Google Scholar
9. Cerdeira, F., Buchenauer, C.J., Pollak, F.H., and Cardona, M., Phys. Rev. B5, 580, (1972).Google Scholar
10. Hull, R. and Bean, J.C., Appl. Phys. Lett. 54, 925, (1989).Google Scholar
11. Baribeau, J.M., Jackman, T.E., Houghton, D.C., Maigne, P., and Denhoff, N. W., J.Appl. Phys. 63, 5738, (1988).Google Scholar