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RF Microwave Switches Based on Reversible Metal-Semiconductor Transition Properties of VO2 Thin Films: An Attractive Way To Realise Simple RF Microelectronic Devices

Published online by Cambridge University Press:  01 February 2011

Frédéric Dumas-Bouchiat ,
Corinne Champeaux ,
Alain Catherinot ,
Julien Givernaud ,
Aurelian Crunteanu  and
Pierre Blondy
Frédéric Dumas-Bouchiat
Affiliation:
[email protected], Institut L. Néel UPR 2940 CNRS, Grenoble, France
Corinne Champeaux
Affiliation:
[email protected], SPCTS UMR 6638, Univ Limoges / CNRS, Limoges, France
Alain Catherinot
Affiliation:
[email protected], SPCTS UMR 6638, Univ Limoges / CNRS, Limoges, France
Julien Givernaud
Affiliation:
[email protected], Xlim UMR 6172, Univ Limoges / CNRS, Limoges, France
Aurelian Crunteanu
Affiliation:
[email protected], Xlim UMR 6172, Univ Limoges / CNRS, Limoges, France
Pierre Blondy
Affiliation:
[email protected], Xlim UMR 6172, Univ Limoges / CNRS, Limoges, France
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Abstract

Microwave switches in both shunt and series configurations are developped using semiconductor to metal (SC-M) transition of vanadium dioxide (VO2) thin films deposited by in situ pulsed laser deposition on C-plane sapphire and SiO2/Si substrates. The influence of geometrical parameters such as the length of the switch is shown. The VO2-based switches exhibit up to 30-40 dB average isolation of the radio-frequency (RF) signal on a very wide frequency band (500 MHz-35 GHz) with weak insertion losses, when thermally activated. Furthermore, they can be electrically activated. Finally these VO2-based switches are integrated in the fabrication of innovative tunable band-stop filters which consist in a transmission line coupled with four U-shaped resonators and operate in 9-11 GHz frequency range. Its tunability is demonstrated using electrical activation of each VO2-based switch.

Keywords

thin filmmicroelectronicslaser ablation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1129: Symposium V – Materials and Devices for Smart Systems III , 2008 , 1129-V14-01
Copyright
Copyright © Materials Research Society 2009

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References

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