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Remote True Temperature Pyrometry of Si Wafers: Theoretical and Practical Considerations

Published online by Cambridge University Press:  10 February 2011

E. Glazman ,
A. Glazman  and
A. Thon
E. Glazman
Affiliation:
3T - True Temperature Technologies, Theradion Industrial Park, Misgav 20179, Israel
A. Glazman
Affiliation:
3T - True Temperature Technologies, Theradion Industrial Park, Misgav 20179, Israel
A. Thon
Affiliation:
3T - True Temperature Technologies, Theradion Industrial Park, Misgav 20179, Israel
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Abstract

The problems of real thermodynamic temperature measurement in semiconductor processing can be divided into fundamental and environmental. The first type arises from a-priori unknown and in process changing optical properties (emissivity) of the target wafer. Others have to do with the need to eliminate direct and indirect stray heat flux from entering into the sensor. We describe the advantages and pitfalls of various (passive and active) remote measurement methods. Experimental results of a novel emissivity independent technique for real time measurement in the range of 450–850°C with accuracy better than 1% for wafer emissivity in the range of 0.2 to 0.95 are given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 569: Symposium U – In Situ Process Diagnostics and Modelling , 1999 , 171
Copyright
Copyright © Materials Research Society 1999

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References

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