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Reliability and Properties of Pzt Thin Films for Mems Applications

Published online by Cambridge University Press:  10 February 2011

D. F. Bahr
Affiliation:
School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164-2920
J. C. Merlino
Affiliation:
School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164-2920
P. Banerjee
Affiliation:
School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164-2920
C. M. Yip
Affiliation:
Department of Chemical Engineering and Applied Chemistry, Institute of Biomaterials and Biomedical Engineering, University of Toronto, Toronto, Ontario CANADA M5S 3G9
A. Bandyopadhyay
Affiliation:
School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164-2920
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Abstract

Thin films of PZT have been deposited using a solution deposition method onto platinized silicon substrates. The effects of process variables, including sintering time and solution molarity, have been investigated on the resulting microstructure and electrical properties. As utilizing piezoelectric thin films in geometries for MEMS applications requires load to be transferred between the film and an underlying membrane, the adhesion of these films has been examined using nanoindentation techniques. Delaminations occur at the PZT-Pt interface, suggesting that these films may be susceptible to interfacial failure with repeated bending. Longer firing times are shown to improve the adhesion of the films, but increase the surface roughness and grain size. Film hardnesses range between 4 and 6.8 GPa; for sintering times beyond 5 minutes at 700 °C the hardness appears relatively constant. Electrical properties are shown to degrade with tine at elevated temperatures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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