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Relation Between Temperature and Solidification Velocity in Rapidly Cooled Liquid Silicon

Published online by Cambridge University Press:  25 February 2011

M. O. Thompson ,
P. H. Bucksbaum  and
J. Bokor
M. O. Thompson
Affiliation:
Cornell University, Ithaca, NY14853
P. H. Bucksbaum
Affiliation:
AT&T Bell Laboratories, Murray Hill,NJ07974
J. Bokor
Affiliation:
AT&T Bell Laboratories, Holmdel, NY07733
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Abstract

A semi-empirical method to determine the undercooling-velocity relationship for laser induced melting is presented. The technique uses measurements of melt depth versus time to control numerical simulations, resulting in a map of the interface temperature as a function of time, and consequently as a function of the interface velocity. The results are independent of any model for the velocity-undercooling relationship. Results of the technique on simulated and experimental melt depth data are presented. Transient conductance data on 28 nanosecond 694 nm laser irradiation of silicon indicate an undercooling-velocity slope of 17±3 K/(m/sec) near the melting point. Picosecond optical transmission data show a much smaller slope.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 181
Copyright
Copyright © Materials Research Society 1985

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References

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