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Relation Between Defect Density and Local Structures of a-Si:H

Published online by Cambridge University Press:  15 February 2011

M. Azuma ,
K. Nakamura ,
T. Yokoi ,
K. Yoshino  and
I. Shimizu
M. Azuma
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Wagatsuta, Midori-ku, Yokohama, Japan 226
K. Nakamura
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Wagatsuta, Midori-ku, Yokohama, Japan 226
T. Yokoi
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Wagatsuta, Midori-ku, Yokohama, Japan 226
K. Yoshino
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Wagatsuta, Midori-ku, Yokohama, Japan 226
I. Shimizu
Affiliation:
The Graduate School, Tokyo Institute of Technology, 4259 Wagatsuta, Midori-ku, Yokohama, Japan 226
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Abstract

High quality a-Si:H thin films with varied optical gaps in the range from 1.55 to 2.1 eV were fabricated by various methods, i.e., the standard RF glow discharge of silane, “Chemical Annealing” and ECR-H-plasma from SiCl2H2 under in situ monitoring with an ellipsome try. Despite marked differences in the local structure, all these films showed low defect density as low as (3–5) × 1015 cm3. In addition, the stability for light soaking was improved markedly for the films made by promoting intensively structural relaxation with atomic hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 191
Copyright
Copyright © Materials Research Society 1995

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References

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