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Rapid Isothermal Fusion of BPSG Films

Published online by Cambridge University Press:  26 February 2011

J. S. Mercier ,
L. D. Madsen  and
I. O. Calder
J. S. Mercier
Affiliation:
Northern Telecom Electronics Limited, Semiconductor Components Group, Ottawa, Ontario, Canada KIY 4H7
L. D. Madsen
Affiliation:
Northern Telecom Electronics Limited, Semiconductor Components Group, Ottawa, Ontario, Canada KIY 4H7
I. O. Calder
Affiliation:
Northern Telecom Electronics Limited, Semiconductor Components Group, Ottawa, Ontario, Canada KIY 4H7
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Abstract

A study on the rapid isothermal fusion (RIF) properties of borophosphosilicate glass (BPSG) films is presented. Conventional furnace fusion (FF) results are also reported for comparison purposes. The effects of varyinq the temperature (950°-1150°C for RIF, and 800°-1000°C for FF) and the cycle duration (5–60 s for RIF, and 7–60 min for FF) were investigated in a N2 ambient. Two deposition methods were used for the BPSG films, namely atmos- Dheric pressure CVD (APCVD) and low pressure CVD (LPCVD), both with the low temperature oxidation of SiH4, PH3 and B2H6 as a deposition reaction mechanism. The boron and phosphorus concentrations were maintained at 4 w/o for both species. Step coveraae fusion test structures were used to characterize the qlass flow. It was found that for both RIF and FF techniques, a considerable amount of fusion resulted from heating cycles which are compatible with the shallow Junctions required for VLSIC's. With BPSG, the choice between RIF and FF can thus be based on criteria other than olass fusion, such as shallow junction annealing. Also, more fusion was obtained for LPCVD films than for APCVD films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 251
Copyright
Copyright © Materials Research Society 1986

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