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Raman Characterization of Strained GaNyAs1-y and InxGa1-xNyAs1-y Epilayers

Published online by Cambridge University Press:  01 February 2011

Li-Lin Tay ,
David J. Lockwood ,
James A. Gupta  and
Zbig R. Wasilewski
Li-Lin Tay
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada K1A 0R6
David J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada K1A 0R6
James A. Gupta
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada K1A 0R6
Zbig R. Wasilewski
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, Canada K1A 0R6
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Abstract

Pseudomorphically strained epitaxial films of the ternary alloy GaNyAs1-y have been grown on GaAs(100) with y ranging from 0 to 0.05. The optical phonon Raman spectrum of the alloy displays a two-mode behavior. The GaAs-like first order modes are represented at y = 0.05 by the strong longitudinal optic (LO1) mode at 288.5 cm-1 and the weaker transverse optic (TO1) mode at 268.3 cm-1, while the GaN-like LO2 mode is observed at 474.8 cm-1. Two very broad disorder-induced acoustic bands are evident at 80 and 170 cm-1 due to atomic disorder within the crystalline network. Raman studies show that as the nitrogen concentration increases, the GaAs-like LO1 band shifts linearly towards lower wavenumber while the GaN-like LO2 phonon band displays a sub-linear increase in wavenumber. Raman results for the unstrained quaternary alloy In0.06Ga0.94N0.02As0.98 are compared with those of GaN0.02As0.98.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.67
Copyright
Copyright © Materials Research Society 2004

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