Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-25T17:53:07.145Z Has data issue: false hasContentIssue false

Pulsed Laser Deposition of Aluminum Tris-8-hydroxyquinline and TPD Thin Films

Published online by Cambridge University Press:  15 February 2011

Kenji Ebihara
Affiliation:
Department of Electrical Computer Engineering, and Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto, 860-8555, JAPAN
Pail-Kyun Shin
Affiliation:
Department of Electrical Computer Engineering, and Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto, 860-8555, JAPAN
Tamiko Ohshima
Affiliation:
Department of Electrical Computer Engineering, and Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto, 860-8555, JAPAN
Hiroshi Kurihara
Affiliation:
Department of Electrical Computer Engineering, and Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto, 860-8555, JAPAN
Tomoaki Ikegami
Affiliation:
Department of Electrical Computer Engineering, and Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto, 860-8555, JAPAN
Toshihisa Yamaguchi
Affiliation:
Kumamoto Technology and Industry Foundation, 2081-10 Tahara, Mashiki, 861-2202, JAPAN
Takamasa Sakai
Affiliation:
Kumamoto Technology and Industry Foundation, 2081-10 Tahara, Mashiki, 861-2202, JAPAN
Get access

Abstract

Thin films of low molecular weight electroluminescence (EL) materials, Alq3 (aluminum tirs-8-hydoroxyquinline), TPD (N,N'-diphenyl-N,N'-bis (3methylphenyl)-(1,1'-biphenyle)-4, 4'-diamine) were deposited by pulsed laser ablation (PLA) method using KrF excimer laser and Nd:YAG laser. Optical absorption property, surface morphology and photoluminescence of the films were investigated. Alq3 films by Nd:YAG laser show slight absorption at around 400 nm, and TPD films by either KrF laser or Nd:YAG laser showed absorption at 320 nm and 360 nm. It was found that TPD thin films for EL devices can be deposited by PLAmethod usig Nd:YAG laser.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Matsumoto, N., Shima, H., Fujii, T., and Kannari, F., Appl. Phys. Lett. 71 (17), 24692471 (1997).Google Scholar
2. Yang, Xinju, Tang, Yongxin, Yu, Ming, Qin, Qizong, Thin Solid Films 358, 187190 (2000).Google Scholar
3. Hong, C., Chae, H.B., Lee, K.H., Ahn, S.K., Kim, C.K., Kim, T.W., Cho, N.I., Kim, S.O., Thin Solid Films 409, 3742 (2002).Google Scholar
4. Kim, H., Gilmore, C.M., Horwitz, J.S., Pique, A., Murata, H., Kushto, G.P., Schlaf, R., Kafafi, Z.H., and Chrisey, D.B., Appl. Phys. Lett. 76 (3), 259261 (2000).Google Scholar