Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-05T15:54:39.800Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Ion Implanted Ti-6Al-4V Processed using Beamline and PSII Techniques

Published online by Cambridge University Press:  03 September 2012

K. C. Walter ,
J. M. Williams ,
J. S. Woodring ,
M. Nastasi ,
D. B. Poker  and
C. M. Munson
K. C. Walter
Affiliation:
Los Alamos National Laboratory, MS-K762, Los Alamos, NM 87545
J. M. Williams
Affiliation:
Oak Ridge National Laboratory, MS-6057, Solid State Division, Oak Ridge, TN 37831
J. S. Woodring
Affiliation:
Los Alamos National Laboratory, MS-K762, Los Alamos, NM 87545
M. Nastasi
Affiliation:
Los Alamos National Laboratory, MS-K762, Los Alamos, NM 87545
D. B. Poker
Affiliation:
Oak Ridge National Laboratory, MS-6057, Solid State Division, Oak Ridge, TN 37831
C. M. Munson
Affiliation:
Los Alamos National Laboratory, MS-K762, Los Alamos, NM 87545
Get access

Abstract

The surface of Ti-6Al-4V (Ti64) alloy has been modified using beamline implantation of boron. In separate experiments, Ti64 has been implanted with nitrogen using a plasma source ion implantation (PSII) technique utilizing either ammonia (NH 3), nitrogen (N2), or their combinations as the source of nitrogen ions. Beamline experiments have shown the hardness of the N-implanted surface saturates at a dose level of ˜4× 1017 at/cm2 at ˜10 GPa. The present work makes comparisons of hardness and tribological tests of (1) B implantation using beamline techniques, and (2) N implanted samples using ammonia and/or nitrogen gas in a PSII process. The results show that PSII using N2 or NH3 gives similar hardness as N implantation using a beamline process. The presence of H in the Ti alloy surface does not affect the hardness of the implanted surface. Boron implantation increased the surface hardness by as much as 2.5x at the highest dose level. Wear testing by a pin-on-disk method indicated that nitrogen implantation reduced the wear rate by as much as 120x, and boron implantation reduced the wear rate by 6.5x. Increased wear resistance was accompanied by a decreased coefficient of friction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 627
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Williams, J.M., Riester, L., Pandey, R. and Eberhardt, A.W., accepted for publication in Surface and Coatings Technology as part of the proceedings of Surface Modification of Metals by Ion Beams-95, San Sebastian, Spain.Google Scholar
2. Rauschenbach, B., Surf. Coat. Technol. 66, 279 (1994).Google Scholar
3. Williams, J.M., Bearsdsley, G.M., Buchanan, R.A. and Bacon, R.K., Mat. Sci. Engin. 69, 237 (1985).Google Scholar
4. Chen, A., Blanchard, J., Conrad, J.R., Fetherston, P. and Qiu, X., Wear 165, 97 (1993).Google Scholar
5. Chen, A., Qiu, X., Conrad, J.R., Dodd, R.A., Worzala, F. and Blanchard, J., J. Mater. Eng. 12, 299 (1990).Google Scholar
6. Qiu, X., Dodd, R.A., Conrad, J.R., Chen, A. and Worzala, F.J., Nucl. Instr. Methods Phys. Res. B59/60, 951 (1991).Google Scholar
7. Chen, A., Scheuer, J.T., Ritter, C., Alexander, R.B. and Conrad, J.R., J. Appl. Phys. 70, 6757 (1991).Google Scholar
8. Johns, S.M., Bell, T., Samandi, M. and Collings, G.A., Surf. Coat. Technol. 85, 7 (1996).Google Scholar
9. Han, S.H., Kim, H.D., Lee, Y., Lee, J. and Kim, S.G., Surf. Coat. Technol. 82, 270 (1996).Google Scholar
10. Zhou, K.S. and Herman, H., Surf. Technol. 18, 51 (1983).Google Scholar
11. Bolster, R.N., Singer, I.L. and Vardiman, R.G., Surf. Coat. Technol. 33, 469 (1987).Google Scholar
12. Zhang, D.W., Zhang, X.P., Yu, W.C.. and Wang, Z.G., Surf. Coat. Technol. 58, 119 (1993).Google Scholar
13. Holleck, H., J. Vac. Sci. Technol. A4, 2661 (1986).Google Scholar