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Precipitation, Phase Transformation, and Enhanced Diffusion in Ion-Implanted Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
Z-contrast scanning transmission electron microscopy has been used to study the connection between dopant precipitation and phase transformation in high dose In+ and Sb+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 107 over tracer crystalline values. With Sb+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.
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- Copyright © Materials Research Society 1988
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