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Photoresist Stripping Using a Remote Plasma: Chemical and Transport Effects

Published online by Cambridge University Press:  25 February 2011

Lee M. Loewenstein ,
Craig H. Huffman  and
Cecil J. Davis
Lee M. Loewenstein
Affiliation:
Materials Science Laboratory and
Craig H. Huffman
Affiliation:
Semiconductor Process Laboratory, Texas Instruments, Incorporated, P.O. Box 655936, MS 147, Dallas, TX 75265.
Cecil J. Davis
Affiliation:
Semiconductor Process Laboratory, Texas Instruments, Incorporated, P.O. Box 655936, MS 147, Dallas, TX 75265.
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Abstract

Photoresist removal from silicon substrates has been achieved by a dry processing method using a plasma remote from the substrate to produce active species. Although the principal gas used is oxygen, the addition of small amounts of other gases (N2O, HCI, HBr, H2, Cl2, CF4, and CHF3) has been shown to significantly enhance resist removal. The measured temperature dependences indicate that the effect of these additives may be a combination of oxygen atom production enhancement by neutral and ionic mechanisms as well as independent reaction with the resist.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 267
Copyright
Copyright © Materials Research Society 1987

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References

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