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Photoluminescence of multi-layer GeSi dots grown on Si (001)

Published online by Cambridge University Press:  21 March 2011

J. Wan ,
Y. H. Luo ,
G. L. Jin ,
Z. M. Jiang ,
J. L. Liu ,
X. Z. Liao ,
J. Zou  and
Kang L. Wang
J. Wan
Affiliation:
Device Research Laboratory, Electrical Engineering DepartmentUniversity of California at Los Angeles, Los Angeles, CA 90095-1594, U.S.A.
Y. H. Luo
Affiliation:
Device Research Laboratory, Electrical Engineering DepartmentUniversity of California at Los Angeles, Los Angeles, CA 90095-1594, U.S.A.
G. L. Jin
Affiliation:
Device Research Laboratory, Electrical Engineering DepartmentUniversity of California at Los Angeles, Los Angeles, CA 90095-1594, U.S.A.
Z. M. Jiang
Affiliation:
Device Research Laboratory, Electrical Engineering DepartmentUniversity of California at Los Angeles, Los Angeles, CA 90095-1594, U.S.A.
J. L. Liu
Affiliation:
Device Research Laboratory, Electrical Engineering DepartmentUniversity of California at Los Angeles, Los Angeles, CA 90095-1594, U.S.A.
X. Z. Liao
Affiliation:
Australian Key Center for Microscopy & Microanalysis, The University of Sydney, Sydney NSW 2006, Australia
J. Zou
Affiliation:
Australian Key Center for Microscopy & Microanalysis, The University of Sydney, Sydney NSW 2006, Australia
Kang L. Wang
Affiliation:
Device Research Laboratory, Electrical Engineering DepartmentUniversity of California at Los Angeles, Los Angeles, CA 90095-1594, U.S.A.
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Abstract

Temperature and power dependent photoluminescence measurements were carried out on the multi-layer structure of GeSi dots grown on Si(001) substrate by gas-source molecular beam epitaxy. The transfer of photon-induced carriers from wetting layers into the dots and the region near the dots was evidenced. Different power dependent behaviors of the photoluminescence peak position were observed for the dots and the wetting layer. Accordingly, type-II and type-I band alignments were proposed for the dots and the wetting layers, respectively. After annealing, the photoluminescence peaks from the dots and the wetting layers showed blueshift due to the atomic intermixing. For the samples annealed at temperature above 850°C for 5min, the band alignment of the dots changes from type-II to type-I.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 667: Symposium G – Luminescence and Luminescent Materials , 2001 , G6.4
Copyright
Copyright © Materials Research Society 2001

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References

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