Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Godbey, D.
Twigg, M.
Palkuti, L.
Leonov, P.
Wang, J.
Hughes, H.
and
Kub, F.
1989.
A Si/sub 0.7/Ge/sub 0.3/ strained layer etch stop for the generation of bond and etch back SOI.
p.
143.
1989.
ESSDERC ’89.
McDaid, L.J.
Hall, S.
Eccleston, W.
and
Alderman, J.C.
1989.
Negative resistance in the output characteristics of SOI MOSFETs.
p.
33.
MacElwee, T.W.
and
Calder, I.D.
1989.
Accumulation mode transistors for silicon-on-insulator circuits.
p.
171.
Yoshimi, M.
Hazama, H.
Takahashi, M.
Kambayashi, S.
Wada, T.
and
Tango, H.
1989.
Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI film.
IEEE Transactions on Electron Devices,
Vol. 36,
Issue. 3,
p.
493.
Colinge, J.-P.
1989.
Thin-film SOI technology: the solution to many submicron CMOS problems.
p.
817.
Godbey, D.
Hughes, H.
Kub, F.
Twigg, M.
Palkuti, L.
Leonov, P.
and
Wang, J.
1990.
A Si0.7Ge0.3 strained-layer etch stop for the generation of thin layer undoped silicon.
Applied Physics Letters,
Vol. 56,
Issue. 4,
p.
373.
Wouters, D.J.
Colinge, J.-P.
and
Maes, H.E.
1990.
Subthreshold slope in thin-film SOI MOSFETs.
IEEE Transactions on Electron Devices,
Vol. 37,
Issue. 9,
p.
2022.
Mayer, D.C.
1990.
Modes of operation and radiation sensitivity of ultrathin SOI transistors.
IEEE Transactions on Electron Devices,
Vol. 37,
Issue. 5,
p.
1280.
MacElwee, T.W.
Calder, I.D.
Bruce, R.A.
and
Shepherd, F.R.
1990.
High-performance fully depleted silicon-on-insulator transistors.
IEEE Transactions on Electron Devices,
Vol. 37,
Issue. 6,
p.
1444.
Tack, M.R.
Gao, M.
Claeys, C.L.
and
Declerck, G.J.
1990.
The multistable charge-controlled memory effect in SOI MOS transistors at low temperatures.
IEEE Transactions on Electron Devices,
Vol. 37,
Issue. 5,
p.
1373.
McDaid, L.J.
Hall, S.
Eccleston, W.
and
Alderman, J.C.
1991.
A simple technique for measuring the generation lifetime in SOI-substrate material using the principle of charge centroids.
IEEE Electron Device Letters,
Vol. 12,
Issue. 6,
p.
318.
Mayer, D.C.
Cole, R.C.
and
Pollack, G.P.
1991.
Determination of back interface state distribution in fully depleted SOI MOSFETs.
p.
329.
Venkatesan, S.
Neudeck, G.W.
and
Pierret, R.F.
1992.
Dual-gate operation and volume inversion in n-channel SOI MOSFET's.
IEEE Electron Device Letters,
Vol. 13,
Issue. 1,
p.
44.
Nguyen
Kuehne
Renteln
and
Wong
1992.
Quasi-SOI MOSFETs using selective epitaxy and polishing.
p.
341.
Chikyow, Toyohiro
Tye, Lee
El-Masry, Nadia A.
and
Bedair, Salah M.
1993.
Growth Mode of CeO2 on Si Surface.
MRS Proceedings,
Vol. 318,
Issue. ,
Agrawal, B.
De, V.K.
Pimbley, J.M.
and
Meindl, J.D.
1994.
Short channel models and scaling limits of SOI and bulk MOSFETs.
IEEE Journal of Solid-State Circuits,
Vol. 29,
Issue. 2,
p.
122.
Tye, L.
Chikyow, T.
El-Masry, N. A.
and
Bedair, S. M.
1994.
Epitaxial CeO2 Growth on Si (111) for SOI.
MRS Proceedings,
Vol. 341,
Issue. ,
Ulyanenkov, A P
Stepanov, S A
Pietsch, U
and
Kohler, R
1995.
A dynamical diffraction approach to grazing-incidence X-ray diffraction by multilayers with lateral lattice misfits.
Journal of Physics D: Applied Physics,
Vol. 28,
Issue. 12,
p.
2522.
Kato, S.
Horikoshi, T.
Ohkubo, T.
Iida, T.
and
Takano, Y.
1999.
Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus.
MRS Proceedings,
Vol. 607,
Issue. ,