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Oxide Electrodes for Buried-Channel Field Effect Transistors

Published online by Cambridge University Press:  21 March 2011

A.G. Schrott ,
J.A. Misewich ,
D.W. Abraham ,
R. Ramesh  and
V. Nagarajan
A.G. Schrott
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598
J.A. Misewich
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598
D.W. Abraham
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598
R. Ramesh
Affiliation:
Materials Research Science and Engineering. Center, University of Maryland, College Park, MD 20742
V. Nagarajan
Affiliation:
Materials Research Science and Engineering. Center, University of Maryland, College Park, MD 20742
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Abstract

In this paper we describe the fabrication of oxide based electrodes that allow epitaxial growth of multilayer structures used to fabricate buried oxide-channel field effect transistors. The distinct characteristic of our buried electrodes is that they provide an etch stop layer which allow the opening of vias through the gate oxide using chemical etching. They can be patterned to define 1μm channel lengths and exhibit low contact resistance with channel materials such as YxPr1−xBa2Cu3O7-σ (YPBCO) or YBa2Cu3O7σ (YBCO).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F5.4
Copyright
Copyright © Materials Research Society 2001

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References

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