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Oxidation Kinetics of Silicon Surfaces: Reactive Sticking Coefficient, Apparent Saturation Coverage and Effect of Surface Hydrogen

Published online by Cambridge University Press:  25 February 2011

S. M. George ,
P. Gupta ,
C. H. Mak  and
P. A. Coon
S. M. George
Affiliation:
Dept. of Chemistry, Stanford University, Stanford, Calif. 94305
P. Gupta
Affiliation:
Dept. of Chemistry, Stanford University, Stanford, Calif. 94305
C. H. Mak
Affiliation:
Dept. of Chemistry, Stanford University, Stanford, Calif. 94305
P. A. Coon
Affiliation:
Dept. of Chemistry, Stanford University, Stanford, Calif. 94305
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Abstract

The kinetics of the initial oxidation of silicon surfaces by O2 were studied using laser-induced thermal desorption (LITD), temperature programmed desorption (TPD) and Fourier Transform Infrared (FTIR) spectroscopy. The LITD results showed that the oxidation of Si(111)7×7 by O2 was characterized by two kinetic processes: an initial rapid oxygen uptake followed by a slower growth that asymptotically approached an apparent saturation oxygen coverage. The initial reactive sticking coefficient of O2 on Si(111)7×7 decreased with surface temperature. In contrast, TPD experiments on Si(111)7×7 and FTIR studies on porous silicon demonstrated that the apparent saturation oxygen coverage increased as a function of surface temperature. Experiments with preadsorbed hydrogen also revealed that silicon oxidation was inhibited as a function of increasing hydrogen coverage on the Si(111)7×7 surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 169
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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