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The Outdiffusion of Boron and Arsenic from Pre-Formed Ion-Beam-Mixed Cobalt Disilicide Layers using Rapid Thermal Processing
Published online by Cambridge University Press: 25 February 2011
Abstract
Arsenic out-diffusing from Cobalt Disilicide into underlying silicon displays an enhanced activation level of up to 80%, and an enhanced diffusivity of greater than one order of magnitude. Boron, in contrast, displays a diffusivity as small as 0.25 times that expected. These observations are consistent with a considerable Si-vacancy injection by the silicide layer into the underlying substrate.
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- Copyright © Materials Research Society 1989
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