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Optical Characterization of Interface, Surface and Bulk Defects in A-Si:H

Published online by Cambridge University Press:  25 February 2011

P. D. Persans ,
D. Arnzen  and
G. E Possin
P. D. Persans
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY
D. Arnzen
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY
G. E Possin
Affiliation:
General Electric Company, Corporate Research and Development Center, Schenectady, NY
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Abstract

We present a new analysis approach which combines photoconductivity and photother-mal deflection spectroscopies in a-Si:H thin films of various thicknesses to profile electronic defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 231
Copyright
Copyright © Materials Research Society 1990

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References

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