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Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems

Published online by Cambridge University Press:  28 February 2011

Nancy Voke  and
Jerzy Kanicki
Nancy Voke
Affiliation:
IBM Thomas J.Watson Research Center P.O.Box 218, Yorktown Heights, New York 10598, U.S.A.
Jerzy Kanicki
Affiliation:
IBM Thomas J.Watson Research Center P.O.Box 218, Yorktown Heights, New York 10598, U.S.A.
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Extract

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Special attention has been devoted to the influence of hydrogen on optical and electrical properties.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 175
Copyright
Copyright © Materials Research Society 1986

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