Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T07:35:26.208Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems

Published online by Cambridge University Press:  28 February 2011

Nancy Voke  and
Jerzy Kanicki
Nancy Voke
Affiliation:
IBM Thomas J.Watson Research Center P.O.Box 218, Yorktown Heights, New York 10598, U.S.A.
Jerzy Kanicki
Affiliation:
IBM Thomas J.Watson Research Center P.O.Box 218, Yorktown Heights, New York 10598, U.S.A.
Get access

Extract

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Special attention has been devoted to the influence of hydrogen on optical and electrical properties.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 175
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lanford, W.A. and Rand, M.J., J.Appl.Phys., 499, 2473 (1978).Google Scholar
2. Tauc, J., Mat.Res.Bull., 5, 721 (1970).CrossRefGoogle Scholar
3. Bauer, J., Phys.Stat.Sol.(a), 39, 411 (1977).Google Scholar
4. Hezel, R. and Lieske, N., J.Appl.Phys., 53, 1671 (1982).Google Scholar
5. Robertson, J. and Powell, M., Mat.Res.Symp.Proc., 49, 215 (1985).CrossRefGoogle Scholar
6. Frenkel, J., Phys.Rev., 54, 647 (1938).CrossRefGoogle Scholar
7. Rose, A., Phys.Rev., 97, 1538 (1955).CrossRefGoogle Scholar