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Nucleation in Amorphous Si:H Alloy

Published online by Cambridge University Press:  26 February 2011

Y. C. Koo ,
A. R. Perrin ,
K. T. Aust  and
S. Zukotynski
Y. C. Koo
Affiliation:
University of Toronto, Dept. of Metallurgy and Materials Science, Toronto, Ont. Canada, M5S 1A4
A. R. Perrin
Affiliation:
University of Toronto, Dept. of Metallurgy and Materials Science, Toronto, Ont. Canada, M5S 1A4
K. T. Aust
Affiliation:
University of Toronto, Dept. of Metallurgy and Materials Science, Toronto, Ont. Canada, M5S 1A4
S. Zukotynski
Affiliation:
University of Toronto, Dept. of Electrical Engineering, Toronto, Ont. Canada, M5S 1A4
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Abstract

A method of producing microcrystalline material from thin films of hydrogenated amorphous silicon was investigated. Exposure to gamma and neutron radiation, and silicon self ion implantation were used to induce nucleation in the amorphous material. According to the preliminary results, neutron irradiation represents a most promising method for promoting crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 429
Copyright
Copyright © Materials Research Society 1988

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References

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