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Nucleation and Growth of Sputter Deposited Zno:Al Thin Films on Soda-Lime Glass Substrates

Published online by Cambridge University Press:  10 February 2011

L. W. Rieth ,
P. H. Holloway  and
E. Lambers
L. W. Rieth
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, FL 32611–6400, [email protected], [email protected]
P. H. Holloway
Affiliation:
Materials Science and Engineering, University of Florida, Gainesville, FL 32611–6400, [email protected], [email protected]
E. Lambers
Affiliation:
Major Analytical Instrument Center, University of Florida, Gainesville, FL 32611–6400, [email protected]
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Abstract

Degenerately doped thin films of zinc oxide are useful in a variety of applications, including front transparent contacts to Cu(In,Ga)Se2 thin film solar cells and flat panel displays. To gauge the influence of the interface on the performance of sputter deposited ZnO:AI transparent electrodes, the structure and electrical properties of the interfacial region has been investigated during nucleation and growth of the thin films. RF magnetron sputter deposited films with thicknesses ranging from ∼20 to 1580 Å were characterized using Atomic Force Microscopy (AFM), Auger Electron Spectroscopy (AES), Hall measurements, and four point probe. AES spectra of the films with thickness between ∼20 and 60 Å exhibited clear Si (1619eV) peaks suggesting the thin films were discontinuous islands on the substrate. AFM micrographs indicated a distribution of hillocks on the surface which agrees with AES results, and suggest a Volmer-Webber nucleation and growth mechanism. Hall measurements indicated that the films had electron carrier concentrations on the order of 1019 to 1020/cm−3, mobilities of <10cm2V.s, and resistivities on the order of 10−2 to10−3Ω-cm depending on the film thickness. The possible impact of these results on solar cell performance is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 205
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Chopra, I. K., Major, S., and Pandya, D., Thin Solid Films 102, 1–46 (1983)10.1016/0040-6090(83)90256-0Google Scholar
2. Kadota, M. and Minakata, M., Elec. and Comm. in Japan, Part 2, 70, 61– (1996)Google Scholar
3. Basu, S. and Dutta, A., Mater. Chem and Phys. 47, 93– (1997)10.1016/S0254-0584(97)80035-1Google Scholar
4. Sze, S., Physics of Semiconductor Devices, John Wiley & Sons, NY 1981 Google Scholar
5. Hummel, R., Electronic Properties of Materials, Springer-Verlag, NY, 1993 Google Scholar
6. Möller, H., Semiconductors for Solar Cells, Artech House, Inc., MA 1993 Google Scholar
7. Zafar, S., Ferekides, C., Morel, D., J. Vac. Sci. Technol. A 13(4), 2177–82 (1995)10.1116/1.579539Google Scholar
8. Tominaga, K., Yuasa, T., Kume, M., Tada, O., Jap. J. App. Phys., 24(8), 944– (1985)10.1143/JJAP.24.944Google Scholar
9. Chopra, K., Thin Filhn Phenomena, Robert E. Krieger Publishing Co., NY 1979 Google Scholar