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A New Recrystallization Technique for Large Area Thin Film Silicon on Glass Structure

Published online by Cambridge University Press:  28 February 2011

Hiroshi Hayama ,
Masahito Mukainari  and
Takeshi Saito
Hiroshi Hayama
Affiliation:
Functional Devices Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 216, Japan
Masahito Mukainari
Affiliation:
Functional Devices Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 216, Japan
Takeshi Saito
Affiliation:
Functional Devices Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki 216, Japan
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Abstract

A new recrystallization technique has been proposed, with which a large area thin film silicon on glass structure is able to be recrystallized. The technique utilizes self-heat-confinement caused by induction eddy currents, analogous to floating zone crystal refining technique. An experimental recrystallization system is shown. A recrystallized silicon layer with some hundred micron grain size was obtained with the system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 293
Copyright
Copyright © Materials Research Society 1991

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References

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