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Nanocrystals and Quantum Dots Formed by High-Dose Ion Implantation

Published online by Cambridge University Press:  21 February 2011

C.W. White ,
J. D. Budai ,
J. G. Zhu ,
S. P. Withrow ,
D. M. Hembree ,
D.O. Henderson ,
A. Ueda ,
Y.S. Tung  and
R. Mu
C.W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tenn.
J. D. Budai
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tenn.
J. G. Zhu
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tenn.
S. P. Withrow
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tenn.
D. M. Hembree
Affiliation:
The Oak Ridge Y-12 Plant, Oak Ridge, Tenn.
D.O. Henderson
Affiliation:
Fisk University, Nashville, Tenn.
A. Ueda
Affiliation:
Fisk University, Nashville, Tenn.
Y.S. Tung
Affiliation:
Fisk University, Nashville, Tenn.
R. Mu
Affiliation:
Fisk University, Nashville, Tenn.
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Abstract

Ion implantation and thermal annealing have been used to produce a wide range of nanocrystals and quantum dots in amorphous (SiO2) and crystalline (AI2O3) matrices. Nanocrystals of metals (Au), elemental semiconductors (Si and Ge), and even compound semiconductors (SiGe, CdSe, CdS) have been produced. In amophous matrices, the nanocrystals are randomly oriented, but in crystalline matrices they are three dimensionally aligned. Evidence for photoluminescence and quantum confinement effects are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 377
Copyright
Copyright © Materials Research Society 1996

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