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Multiplication of Basal Plane Dislocations via Interaction with c-Axis Threading Dislocations in 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Yi Chen ,
Govindhan Dhanaraj ,
Michael Dudley ,
Hui Zhang ,
Ronghui Ma ,
Yevgeniy Shishkin  and
Stephen E Saddow
Govindhan Dhanaraj
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Michael Dudley
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Hui Zhang
Affiliation:
[email protected], Stony Brook University, Department of Mechanical Engineering, Stony Brook, NY, 11794-2300, United States
Ronghui Ma
Affiliation:
[email protected], University of Maryland at Baltimore County, Department of Mechanical Engineering, Baltimore, MD, 21250, United States
Yevgeniy Shishkin
Affiliation:
[email protected], University of South Florida, Department of Electrical Engineering, Tampa, FL, 33620, United States
Stephen E Saddow
Affiliation:
[email protected], University of South Florida, Department of Electrical Engineering, Tampa, FL, 33620, United States
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Abstract

Silicon carbide (SiC) substrates with chemical vapor deposition (CVD) grown epilayers have been characterized by synchrotron white beam X-ray topography (SWBXT). Large numbers of circular basal plane dislocation loops (BPDs) were observed in the substrate which were anchored by threading screw dislocations (SDs). Threading edge dislocations (TEDs) are not observed to play an important role in the multiplication of BPDs. A SD-assisted “conservative climb” model is proposed to explain the multiplication of BPDs during growth and/or post-growth processes. BPDs are shown to multiply on adjacent parallel basal planes via single SD-assisted as well as opposite sign SD-pair-assisted “conservative climb”.

Keywords

crystal growthdefectsgrain boundaries
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B09-04
Copyright
Copyright © Materials Research Society 2006

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