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Modeling of Dislocations in an Epitaxial Island Structure

Published online by Cambridge University Press:  18 March 2011

X. H. Liu ,
F. M. Ross  and
K. W. Schwarz
X. H. Liu
Affiliation:
IBM Watson Research Center, P.O. Box 218 Yorktown Heights, NY 10598, U.S.A.
F. M. Ross
Affiliation:
IBM Watson Research Center, P.O. Box 218 Yorktown Heights, NY 10598, U.S.A.
K. W. Schwarz
Affiliation:
IBM Watson Research Center, P.O. Box 218 Yorktown Heights, NY 10598, U.S.A.
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Abstract

We present calculations of dislocations in CoSi2 islands grown by reactive epitaxy on a Si(111) substrate. The stress fields due to the lattice mismatch are calculated with standard FEM techniques, and are converted into a structured, multi-level and multi-grid stress table that is imported into the PARANOID code to study the dislocation dynamics. Single and multiple dislocations in the island have been simulated, and the predicted patterns are strikingly similar to those observed experimentally. By looking at the growth behavior of very small loops we also find that dislocation-loop nucleation becomes easier as the islands become larger, and that thick islands are dislocated at smaller sizes than thin ones. These results are also in good agreement with experimental observations. We conclude that current modeling techniques are sufficient to treat this type of problem at a useful level of accuracy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 673: Symposium P – Dislocations and Deformation Mechanisms in Thin Films and Small Structures , 2001 , P4.2
Copyright
Copyright © Materials Research Society 2001

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References

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