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Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach

Published online by Cambridge University Press:  15 February 2011

S. Tian ,
M. Morris ,
S. J. Morris ,
B. Obradovic  and
A. F. Tasch
S. Tian
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin, Austin, TX 78712, USA
M. Morris
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin, Austin, TX 78712, USA
S. J. Morris
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin, Austin, TX 78712, USA
B. Obradovic
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin, Austin, TX 78712, USA
A. F. Tasch
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin, Austin, TX 78712, USA
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Abstract

We present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 101
Copyright
Copyright © Materials Research Society 1997

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References

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