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Micro-Structuring of Silicon by Pulsed-Laser Ablation Under Reactive Atmospheres

Published online by Cambridge University Press:  17 March 2011

S. Jesse ,
A. J. Pedraza ,
J. D. Fowlkes ,
J. D. Budai  and
D. H. Lowndes
S. Jesse
Affiliation:
Dept. of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996-2200
A. J. Pedraza
Affiliation:
Dept. of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996-2200, [email protected].
J. D. Fowlkes
Affiliation:
Dept. of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996-2200
J. D. Budai
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
D. H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
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Abstract

Micro-holes hundreds of μm-deep below the initial surface surrounded by 40- μm-tall micro-cones protruding over the initial surface form in silicon as a response to multiple UV pulsed-laser irradiation in an SF6 atmosphere. The micro-holes and micro-cones are arranged in a characteristic ensemble displaying a self-organized pattern. Similarly, deep-holes and micro-column ensembles form when the irradiation is performed in an oxygen-rich atmosphere. The formation mechanism of microcolumns and microcones in these reactive atmospheres has been studied using scanning electron microscopy, profilometry and x-ray diffraction. The growth of cones under SF6 atmospheres was studied in-situ using an ICCD gated camera coupled to a long distance microscope. The images obtained with the ICCD camera show that the fluorescent plume is correlated with the amount of ablated material. There is also a strong correlation between the plume and the growth of the cones. The cones grow in the region where the laser-generated plume is intense. When the flux of silicon-rich material ceases because the holes are very deep the balance between redeposition and ablation is tilted toward the latter and the cones begin to recede. Laser ablation is not only a function of the nominal fluence but also of the surface roughness and microstructure. These results strongly support the growth mechanism whereby laser-ablated silicon-rich molecules and clusters are transported to the tip and side of the cones by the laser- generated plasma.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F14.39.1
Copyright
Copyright © Materials Research Society 2001

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