Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T08:18:18.087Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure Based Modelling of Stress Migration and Electromigration Induced Failure Distributions

Published online by Cambridge University Press:  15 February 2011

P. Børgesen ,
M. A. Korhonen ,
D. D. Brown  and
C.-Y. Li
P. Børgesen
Affiliation:
Department of Materials Science & Engineering, Bard Hall, Cornell University, Ithaca, NY.
M. A. Korhonen
Affiliation:
Department of Materials Science & Engineering, Bard Hall, Cornell University, Ithaca, NY.
D. D. Brown
Affiliation:
Department of Materials Science & Engineering, Bard Hall, Cornell University, Ithaca, NY.
C.-Y. Li
Affiliation:
Department of Materials Science & Engineering, Bard Hall, Cornell University, Ithaca, NY.
Get access

Abstract

Stress and current induced degradation of the interconnects may well define the ultimate limits on device density and total on-chip power in microelectronic circuits. The two damage mechanisms are found to be mutually interdependent in a fashion determined by the line microstructure, as well as by design features such as W-studs and refractory metal back up layers. We have developed a comprehensive model for the synergistic effects of stress migration and electromigration, taking such factors into account. The present work reviews the modelling of the statistical failure distributions, with emphasis on the temperature and current density dependencies, for the case of 'near-bamboo' sub-micron lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 255
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Totta, P. A., 'Stress-Induced Phenomena in Metallization', Amer. Vac. Soc. Series 13 (Li, C.-Y., Totta, P. A., and Ho, P. S., eds., AIP, New York, 1992) pp. 1–20 Google Scholar
2 Kwok, T. and Ho, P. S., in 'Diffusion Phenomena in Thin Films' (Gupta, D., and Ho, P. S., eds., Noyes, Park Ridge, NJ 1988) pp. 369 Google Scholar
3 Korhonen, M. A., Børgesen, P., Brown, D. D., and Li, C.-Y., submitted to J. Appl. Phys. Google Scholar
4 Børgesen, P., Korhonen, M. A., Brown, D. D., Li, C.-Y., Rathore, H. S., and Totta, P. A., submitted to Proc. 2nd Int. Workshop on Stress Induced Phenomena in Metallization, Austin, March 1993 Google Scholar
5 Korhonen, M. A., Børgesen, P., Brown, D. D., Li, C.-Y., Sullivan, T. D., and Totta, P. A., submitted to Proc. 2nd Int. Workshop on Stress Induced Phenomena in Metallization, Austin, March 1993 Google Scholar
6 Korhonen, M. A., Paszkiet, C. A., and Li, C.-Y., J. Appl. Phys. 69 (1991) 8083 Google Scholar
7 Korhonen, M. A., LaFontaine, W. R., Børgesen, P., and Li, C.-Y., J. Appl. Phys. 70 (1991) 6774 CrossRefGoogle Scholar
8 Børgesen, P., Korhonen, M. A., and Li, C.-Y., Proc. SPIE Conf. 'Submicrometer Metallization: The Challenges, Opportunities, and Limitations', San Jose, Sept. 1992 Google Scholar
9 Børgesen, P., Korhonen, M. A., Brown, D. D., and Li, C.-Y., in 'Stress-Induced Phenomena in Metallization', Amer. Vac. Soc. Series 13 (Li, C.-Y., Totta, P. A., and Ho, P. S., eds., AIP, New York, 1992) 219–235 Google Scholar
10 Børgesen, P., Korhonen, M. A., and Li, C.-Y., Thin Solid Films 220 (1992) 8–13 Google Scholar
11 Korhonen, M. A., Børgesen, P., Brown, D. D., and Li, C.-Y., J. Appl. Phys., April 15, 1993 Google Scholar
12 Børgesen, P., Korhonen, M. A., Sullivan, T. D., Brown, D. D., and Li, C.-Y., Mat. Res. Soc. Symp. Proc. 239 (1992) 683ø688 CrossRefGoogle Scholar
13 Cho, J. and Thompson, C. V., Appl. Phys. Lett. 54 (1989) 2577 Google Scholar
14 Walton, D. T., Frost, H. J., and Thompson, C. V., Mat. Res. Soc. Symp. Proc. 225 (1991) 219 CrossRefGoogle Scholar
15 Arzt, E. and Nix, W. D., J. Mater. Res. 6 (1991) 731 Google Scholar
16 Black, J. R., IEEE Trans. Electron Dev. ED–16 (1969) 338 Google Scholar
17 Sullivan, T. D., Appl. Phys. Lett. 55 (1989) 2399 CrossRefGoogle Scholar