Article contents
A Microstructural Study of Reaction-Bonded Silicon Carbide
Published online by Cambridge University Press: 15 February 2011
Abstract
Interfaces in Reaction Bonded Silicon Carbide (RBSC) have been characterized by Analytical and High Resolution Electron Microscopy. Both Si/SiC and SiC/SiC interfaces were free of any oxygen impurity segregation, but contained metallic impurity precipitates. Oxygen was detected in the second phase particles in the SiC grains. A model is presented to explain the evolution of these second phase particles in the SiC grains.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1993
References
- 1
- Cited by