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Microscopic Model for Creation And Removal of Metastable Dangling Bonds in a-Si:H

Published online by Cambridge University Press:  01 February 2011

M.J. Powell ,
S.C. Deane  and
R.B. Wehrspohn
M.J. Powell
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, United Kingdom
S.C. Deane
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, United Kingdom
R.B. Wehrspohn
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
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Abstract

We present a new microscopic model for metastable Si dangling bond defect creation in hydrogenated amorphous silicon, which is applicable to both light-induced and carrier-induced defect creation. The key feature of our model is that hydrogen is always in the tedrahedral-like site, which is strongly bound in amorphous silicon, and never in the bond-centered site. Breaking of Si-Si bonds and successive stabilisation by bond-switching of nearby hydrogen from doubly hydrogenated Si-Si bonds (SiHHSi) results in two hydrogen-stabilised dangling bonds (SiHD). Since hydrogen is in the Td site in all configurations, this defect creation reaction is consistent with ESR, NMR, hydrogenation experiments and the mechanical stress dependence of defect creation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A11.1
Copyright
Copyright © Materials Research Society 2002

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