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Metastability of Light-Induced Defects in Very Low Density of Gap States α- Si1-αCα:H Alloys

Published online by Cambridge University Press:  21 February 2011

M. Sebastiani ,
P. Fiorini ,
F. Alvarez ,
F. Pozzilli ,
O. Pulci  and
F. Evangelisti
M. Sebastiani
Affiliation:
Department of Physics, University “La Sapienza” P.le Aldo Moro 2, 00185 Rome, Italy
P. Fiorini
Affiliation:
Department of Physics, University “La Sapienza” P.le Aldo Moro 2, 00185 Rome, Italy
F. Alvarez
Affiliation:
Department of Physics, University “La Sapienza” P.le Aldo Moro 2, 00185 Rome, Italy
F. Pozzilli
Affiliation:
Department of Physics, University “La Sapienza” P.le Aldo Moro 2, 00185 Rome, Italy
O. Pulci
Affiliation:
Department of Physics, University “La Sapienza” P.le Aldo Moro 2, 00185 Rome, Italy
F. Evangelisti
Affiliation:
Department of Physics, University “La Sapienza” P.le Aldo Moro 2, 00185 Rome, Italy
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Abstract

We have prepared silicon carbon alloys with Tauc's gap of 2.1 eV, low defect density (≃ 3–1015cm-3) and large photoconductivity (αPhoto/αdark=105 in AM 1.5 illumination). On these samples light soaking induces a large number of metastable gap defects which are annealed out at 250 °C. We have studied the kinetics of defect formation varying the duration of light exposure and the light intensity. The experimental data are consistent with a bond breaking model (conversion of tail weak bonds into dangling bonds), provided that the actual occupation of tail states is taken into account.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 601
Copyright
Copyright © Materials Research Society 1992

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References

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