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Metal Vapour Vacuum Arc Ion Source to Synthesize Refractory Metal Silicides

Published online by Cambridge University Press:  03 September 2012

B.X. Liu ,
D.H. Zhu ,
H.B. Lu  and
K. Tao
B.X. Liu
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA
D.H. Zhu
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA
H.B. Lu
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA
K. Tao
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA
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Abstract

Metal Vapour Vacuum Arc (MEVVA) Ion Source was employed, for the first time, to synthesize metal silicides. Refractory metal silicides NbSi2, TaSi2, WSi2 and MoSi2; were successfully formed by implanting respective metal ions into Si(111) wafers. It was found that the high current density metal ion implantation not only provided the metal components but also caused a simultaneous annealing for various metal-silicide phases to grow. When the imp ytation was conducted at 40 kV, the Nb ion current density was up to 76 μA/cm at a dose of 4×1011/cm2, and the Ta, W and Mo ion current densities were up to 65 μA/cm2 at a dose of 5×1017 ions/cm2, hexagonal NbSi2, TaSi2, MoSi2 and WSi2 were formed. Post annealing transformed the WSi2 and MoSi2 phases from hexagonal to tetragonal structure, featuring lower resistance than that of the as-implanted ones.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 191
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Tu, K.N. and Mayer, J.W., in Thin Films Interfaces and Reaction, Edited by Poate, J.M., Tu, K.L.N. and Mayer, J.W. (Wiley, New York, 1978), p. 359 Google Scholar
[2] Poate, J.M., Leamy, H.J., Sheng, T.T. and KLCeiler, G., Appl.Phys.Lett 33, 18 (1978)Google Scholar
[3] Shibata, T., Sigmon, T.W., Regolini, J.L. and Gibbons, J.F., J. Electrochem. Soc. 128, 637, (1981)Google Scholar
[4] Sigmon, T.W., Regolini, J.L., Gibbons, J.F., Lau, S.S. and Mayer, J.W., Abstract 388, p.981, The Electrochemical Society Extended Abstracts. Los Angeles, California, Oct. 14-19, 1979 Google Scholar
[5] Tsaur, B.Y., Liau, Z.L., and Mayer, J.M., Appl. Phys. Lett. 34, 168 (1979)Google Scholar
[6] Tsai, M.Y., Petersson, C.S., d'Heurle, F.M. and Maniscakco, V., App. Phys. Lett. 37, 295 (1980)Google Scholar
[7] Ommen, A. Van, Willemsen, M. and Walters, R., Nucl.Instrum.Meth. in Phys. Res. B19/20, 742(1987)CrossRefGoogle Scholar
[8] Yu, N., Zhou, Z., Zhou, W., Tsou, S. and Zhu, D., Nucl.lnstrum.Meth.in Phys. Res. B19/20, 746 (1987)CrossRefGoogle Scholar
[9] Valyi, G., Ryssel, H., Ganschow, O. and Iede, R., Appl. Surf. Sci, 38, 235 (1989)Google Scholar
[10] Zambova, A. and Nedev, I., Vacuum 43, 223, (1992)Google Scholar
[11] Brown, I.G., Gavin, J.E. and MacGill, R.A., App. Phys. Lett. 47, 358 (1985)Google Scholar
[12] Zhang, X.J., Zhou, F.S., Zhang, H.X., Zhang, S.J., Li, Q. and Han, Z.E., Rev. Sci. Intrum. 64, 2431 (1992)Google Scholar
[13] Zhu, D.H., Tao, K., Pan, F. and Liu, B.X., Appl. Phys. Lett. 62, 2356 (1993)CrossRefGoogle Scholar
[14] Wittower, A. and Hirvonen, J.K., NuclInstrum. & Meth. in Phys.Res. B6,78 (1985)CrossRefGoogle Scholar