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Mechanical Properties of AlN Thin Films Prepared by Ion Beam Assisted Deposition

Published online by Cambridge University Press:  17 March 2011

Shuichi Miyabe ,
Toshiyuki Okawa ,
Nobuaki Kitazawa ,
Yoshihisa Watanabe  and
Yoshikazu Nakamura
Shuichi Miyabe
Affiliation:
National Defense Academy, Department of Materials Science and Engineering, Yokosuka, Kanagawa 239-8686, Japan
Toshiyuki Okawa
Affiliation:
National Defense Academy, Department of Materials Science and Engineering, Yokosuka, Kanagawa 239-8686, Japan
Nobuaki Kitazawa
Affiliation:
National Defense Academy, Department of Materials Science and Engineering, Yokosuka, Kanagawa 239-8686, Japan
Yoshihisa Watanabe
Affiliation:
National Defense Academy, Department of Materials Science and Engineering, Yokosuka, Kanagawa 239-8686, Japan
Yoshikazu Nakamura
Affiliation:
National Defense Academy, Department of Materials Science and Engineering, Yokosuka, Kanagawa 239-8686, Japan
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Abstract

Aluminum nitride (AlN) thin films were prepared by ion-beam assisted deposition method, and the influence of the nitrogen ion beam energy on their microstructure and mechanical properties was studied by changing the ion beam energy from 0.1 to 1.5 keV. Films prepared with a low-energy ion beam show a columnar structure, while films prepared with a high-energy ion beam show a granular structure. The film hardness is found to decrease with increasing nitrogen ion beam energy. It is also found that the film hardness does not change drastically after annealing in nitrogen atmosphere at 500 °C, yielding the residual stress relaxation. It is proposed that the film hardness is dependent on the film microstructure, which can be controlled with the nitrogen ion beam energy, rather than the residual stress in the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O11.10
Copyright
Copyright © Materials Research Society 2001

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