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Major Improvement of Intrinsic a-Si:H Films for Solar Cell Applications

Published online by Cambridge University Press:  01 January 1993

Jianping Xi
Affiliation:
Advanced Photovoltaic Systems, Inc. P.O. Box 7093, Princeton, NJ 08643-7093
Tongyu Liu
Affiliation:
Advanced Photovoltaic Systems, Inc. P.O. Box 7093, Princeton, NJ 08643-7093
Martin Nugent
Affiliation:
Advanced Photovoltaic Systems, Inc. P.O. Box 7093, Princeton, NJ 08643-7093
Kevin Si
Affiliation:
Advanced Photovoltaic Systems, Inc. P.O. Box 7093, Princeton, NJ 08643-7093
Vincent Iafelice
Affiliation:
Advanced Photovoltaic Systems, Inc. P.O. Box 7093, Princeton, NJ 08643-7093
Joe Del Cueto
Affiliation:
Advanced Photovoltaic Systems, Inc. P.O. Box 7093, Princeton, NJ 08643-7093
Malathi Ghosh
Affiliation:
Advanced Photovoltaic Systems, Inc. P.O. Box 7093, Princeton, NJ 08643-7093
Frank Kampas
Affiliation:
Advanced Photovoltaic Systems, Inc. P.O. Box 7093, Princeton, NJ 08643-7093
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Abstract

The combination of a carefully-designed deposition system, process optimization, and a proprietary processing technique, has resulted in reduced structural defects and photo-stable, high quality intrinsic a-Si films. The improvement in material properties is further evidenced by successful incorporation of the material into single junction devices with a record stabilized device efficiency of 7.5%.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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