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Low-Temperature Poly-Si TFT by Excimer Laser Annealing

Published online by Cambridge University Press:  17 March 2011

Tohru Nishibe
Tohru Nishibe*
Affiliation:
LCD R&D Center, Toshiba Corp. 1-9-2 Hatara-cho, Fukaya-shi, Saitama, 366-8510, Japan
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Abstract

Poly-Si TFT-LCD has begun its way to an advanced display by integrating the driver circuits onto the glass substrate. Improvement of poly-Si TFT is essential in order to achieve value-added display where circuits for various functions are integrated on one substrate. This report the concept of poly-Si TFT display from present state to future scope, and required technologies for each generation. It will also focus on technologies such as crystallization and gate insulator formation at low temperature process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D6.1.1
Copyright
Copyright © Materials Research Society 2001

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References

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