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Low-Frequency Noise Characterization in AlGaN/GaN HEMTs with Varying Gate Recess Depths

Published online by Cambridge University Press:  01 February 2011

Shrawan. K. Jha ,
Bun. H. Leung ,
Charles C. Surya ,
Heins Schweizer  and
Manfred. H. Pilkhuhn
Shrawan. K. Jha*
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
Bun. H. Leung
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
Charles C. Surya
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
Heins Schweizer
Affiliation:
Department of Physics, University of Stuttgart, Germany.
Manfred. H. Pilkhuhn
Affiliation:
Department of Physics, University of Stuttgart, Germany.
*
a email: [email protected]
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Abstract

Low-frequency noise measurements were performed on a number of AlGaN/GaN HEMTs with different gate recess depths, which were formed by dry etching. Detailed characterizations of the low-frequency noise properties were performed on the devices as a function of as a function of hot-electron stressing conducted at VD = 10 V and VG = -1.5 V. The room temperature voltage noise power spectral density, SV(ƒ), of the devices were found to show 1/ƒ dependence. A comparison of SV(ƒ) measured from different devices clearly indicate increase in the noise levels for the devices with large recess depths, reflecting the degradation caused by ion-impact induced damage during recess formation. Furthermore, the results of low-frequency noise measurements showed fast degradations for the devices with larger gate recess depths. Our experimental data clearly show that the dry etching process has induced damages in gates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E8.31
Copyright
Copyright © Materials Research Society 2005

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Footnotes

b

National Chiao Tung University, Taiwan, R.O.C.

References

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