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Low Temperature Preparation of KNbO3Films by Hydrothermal Method and Their Characterization

Published online by Cambridge University Press:  13 February 2014

N. Kaneko
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
T. Shiraishi
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
M. Kurosawa
Affiliation:
Department of Information Processing, Tokyo Institute of Technology, G2-32, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
T. Shimizu
Affiliation:
Materials Research Center for Element Strategy, Tokyo Institute of Technology, S2-16, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
H. Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
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Abstract

KNbO3 films were prepared at 100 - 240°C on (100)cSrRuO3//(100)SrTiO3 substrates by hydrothermal method using KOH and Nb2O5 as source materials. The incubation time before starting deposition and the deposition rate after starting deposition increased and decreased with decreasing deposition temperature, respectively. Epitaxial {100}c-oriented KNbO3 films with 300 nm thick were successfully obtained at 100°C on (100)cSrRuO3//(100)SrTiO3 substrates for 144 h. We observed the typical butterfly-shape strain curves originated from the piezoelectricity for the first time for KNbO3 films deposited down to 120°C.

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Articles
Copyright
Copyright © Materials Research Society 2014 

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References

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