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Localized Gallium Doping and Cryogenic Deep Reactive Ion etching in Fabrication of Silicon Nanostructures

Published online by Cambridge University Press:  31 January 2011

Nikolai Chekurov ,
Kestutis Grigoras ,
Antti Peltonen ,
Sami Franssila  and
Ilkka Tittonen
Nikolai Chekurov
Affiliation:
[email protected], Helsinki University of technology, Micro and Nanosciences, Espoo, Finland
Kestutis Grigoras
Affiliation:
[email protected], Helsinki University of technology, Micro and Nanosciences, Espoo, Finland
Antti Peltonen
Affiliation:
[email protected], Helsinki University of Technology, TKK Micronova, Espoo, Finland
Sami Franssila
Affiliation:
[email protected], Helsinki University of technology, Micro and Nanosciences, Espoo, Finland
Ilkka Tittonen
Affiliation:
[email protected], Helsinki University of technology, Micro and Nanosciences, Espoo, Finland
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Abstract

We present a novel fabrication method to create controlled 3-dimensional silicon nanostructures with the lateral dimensions that are less than 50 nm as a result of a rapid clean room compatible process. We also demonstrate periodic and nonperiodic lattices of nanopillars in predetermined positions with the minimum pitch of 100 nm. One of the uses of this process is to fabricate suspended silicon nanowhiskers.

Keywords

Siion-beam processingnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1181: Symposium DD – Ion Beams and Nano-Engineering , 2009 , 1181-DD07-01
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

[1] Steckl, A. J., Mogul, H. C., Mogren, S., Applied Physics Letters, 60, 1883 (1992)Google Scholar
[2] Brugger, J., Beljakovic, G., Despont, M., Rooij, N. F. De, Vettiger, P., Microelectronic engineering, 35, 401 (1997)Google Scholar
[3] Schmidt, B., Oswald, S., Bischoff, L., J. of the Electrochemical Society, 152, G875 (2005)Google Scholar
[4] Qian, H. X., Zhou, W., Miao, J., Lim, L. E. N., Zeng, X. R., Journal of Micromechanics and Microengineering, 18, 35003 (2008)Google Scholar