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Light-Induced, Short-Time Annealing of Silicon-Implanted Layers

Published online by Cambridge University Press:  25 February 2011

D. Wouters  and
H.E. Maes
D. Wouters
Affiliation:
ESAT Laboratory, K.U.LeuvenKardinaal Mercierlaan94B-3030HeverleeBelgium
H.E. Maes
Affiliation:
ESAT Laboratory, K.U.LeuvenKardinaal Mercierlaan94B-3030HeverleeBelgium
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Abstract

Short time anneal experiments were performed in a specially developed annealing system based on a bank of Tungsten-Halogen lamps. The annealing process during the temperature transient was studied as a function of the illumination time with the system operating in the constant maximum power regime. By using this procedure it was shown that electrical activation of all elements (B, P, As) considered in this study is completed within the transient period without noticeable diffusion. Redistribution of the implanted profiles was only observed for longer times after the steady state temperature was reached. Pre-amorphization with Argon is found to significantly alter and retard the annealing behaviour.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 359
Copyright
Copyright © Materials Research Society 1985

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References

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