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Laser Assisted CVD of Aluminum from a Novel Liquid Alane Precursor

Published online by Cambridge University Press:  22 February 2011

Jaesung Han ,
Yoshihide Senzaki ,
Wayne L. Gladfelter  and
Klavs F. Jensen
Jaesung Han
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 021392
Yoshihide Senzaki
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
Wayne L. Gladfelter
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
Klavs F. Jensen
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 021392
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Abstract

We describe pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane with 514 nm radiation from an Ar+ laser. Results from deposition on different substrates, including Pt, Au, W, and Si, provide insight into to thermal and nucleation effects in the laser writing process. High purity Al lines with resistivity close to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and the resulting properties of the deposited lines is investigated. We also demonstrate a two-step fast writing process based on fast laser nucleation of lines followed by selective chemical vapor deposition of Al on the nucleated pattern.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 173
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Han, J., Jensen, K.F., and Norman, J.A.T. in Photons and Low Energy Particles in Surface Processing. (Mater. Res. Soc. Proc. 236, Boston, MA, 1991) pp. 97–104 Google Scholar
2. Simmonds, M.G. and Gladfelter, W.L. in Chemical Aspects of Chemical Vapor Deposition for Metallization, edited by Kodas, T.T. and Hampden-Smith, M.J. (VCH Publishers, New York, in press)Google Scholar
3. Deutch, T.F., Ehrlich, D.J., and Osgood, R.M., Appl. Phys. Lett. 35, 175 (1979)Google Scholar
4. Herman, I.P., Chem. Rev. 89, 1323 (1989)Google Scholar
5. Tsao, J.Y. and Ehrlich, D.J., Appl. Phys. Lett. 45, 617 (1984)Google Scholar
6. Higashi, G.S., Appl. Surf. Sci. 43, 6 (1989)Google Scholar
7. Gladfelter, W.L., Boyd, D.C., and Jensen, K.F., Chem. Mater. 1, 339 (1989)Google Scholar
8. Beach, D.B., Blum, S.E., and LeGouse, F.K., J. of Vac. Sci. Technol. A7, 3117 (1989)Google Scholar
9. Baum, T.H. and Larson, C.E., High Temp. Sci. 27, 237 (1990)Google Scholar
10. Simmonds, M.G., Phillips, E.C., Hwang, J., and Gladfelter, W.L., Chemtronics 5, 155 (1991)Google Scholar
11. Liu, Y.S. and Cole, H.S., (Mat. Res. Soc. Symp. Proc. 154, 1989) pp. 11–20 Google Scholar
12. Chang, C., J. Mat. Res. 2, 697 (1987)Google Scholar
13. Dubois, L.H., Zegarski, B.R., Kao, C.-.T., and Nuzzo, R.Z., Surf. Sci. 236, 77 (1990)Google Scholar
14. Dubois, L.H., Zegarski, B.R., Gross, M.E., and Nuzzo, R.Z., Surf. Sci. 244, 89 (1991)Google Scholar
15. Blauner, P.G., Ro, J.S., Butt, Y., and Melngailis, J., J. Vac. Sci. Technol. B7, 609 (1989)Google Scholar
16. Yamada, M., Nambu, K., and Yamamoto, K., J. Appl. Phys. 57, 965 (1985)Google Scholar
17. Lax, M., Appl. Phys. Lett. 33, 786 (1978)Google Scholar