Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T17:41:52.877Z Has data issue: false hasContentIssue false

Laser and Thermal Induced Reactions of Mo(CO)6, CH3CH2OH, and NO on Si(111)7 × 7

Published online by Cambridge University Press:  28 February 2011

Z. Ying
Affiliation:
Laboratory of Atomic and Solid State Physics and Materials Science Center Clark Hall, Cornell University, Ithaca, New York 14853-2501
W. Ho
Affiliation:
Laboratory of Atomic and Solid State Physics and Materials Science Center Clark Hall, Cornell University, Ithaca, New York 14853-2501
Get access

Abstract

Laser induced reactions of Mo(CO)6, CH3CH2OH, and NO adsorbed on Si(111)7 × 7 at 257 and 514 nm were studied and compared with thermally induced reactions under ultrahigh vacuum conditions utilizing laser induced desorption spectroscopy, thermal desorption spectroscopy, high resolution electron energy loss spectroscopy, and Auger electron spectroscopy. By using continuous wave laser irradiation, photolytic effects are clearly distinguished from pyrolytic effects. Mo(CO)6 and CH3CH2OH adsorbed on Si behave similarly as in the gas phase, whereas a substrate-mediated reaction channel is observed for NO adsorbed on Si.

Type
Articles
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Chuang, T.J., Surf. Sci. Rep. 3, 1 (1983); G.S. Selwyn and M.C. Lin, in Lasers as Reactants and Probes in Chemistry, edited by W.M. Jackson and A.B. Harvey (Howard, Washington, 1985), pp. 269; R.B. Hall and S.J. Bares, in Chemistry and Structure at Interfaces, edited by R.B. Hall and A.B. Ellis (VCH, Deerfield Beach, 1986), pp. 83.Google Scholar
2. Ehrlich, D.J., Osgood, R.M. Jr., and Deutsch, T.F., IEEE J. of Quant. Elect. QE–16, 1233 (1980); J. Vac. Sci. Technol. 21, 23 (1982).Google Scholar
3. Ehrlich, D.J., Osgood, R.M. Jr., and Deutsch, T.F., Appl. Phys. Lett. 36, 698 (1980); F.A. Houle, J. Chem. Phys. 79, 4237 (1983); 80, 4851 (1984); E.B.D. Bourdon, J.P. Cowin, I. Harrison, J.C. Polanyi, J. Segner, C.D. Stanners, and P.A. Yong, J. Phys. Chem. 88, 6100 (1984).Google Scholar
4. Brewer, P., Halle, S., and Osgood, R.M. Jr., in Proceedings of the Materials Research Society Conference on Laser Controlled Chemical Processing of Surfaces, Vol. 29, edited by Johnson, A.W., Ehrlich, D.J., and Schlossberg, H.R. ( Elsevier, New York, 1984 ), pp. 179–184.Google Scholar
5. Goncher, G.M. and Harris, C.B., J. Chem. Phys. 77, 3767 (1982).Google Scholar
6. Farneth, W.D., Zimmerman, P.G., Hogenkamp, D.J., and Kennedy, S.D., J. Am. Chem. Soc. 105, 1126 (1983).Google Scholar
7. Bartosch, C.E., Gluck, N.S., Ho, W., and Ying, Z., Phys. Rev. Lett. 57, 1425 (1986).CrossRefGoogle Scholar
8. Gluck, N.S., Ying, Z., Bartosch, C.E., and Ho, W., J. Chem. Phys., to be published.Google Scholar
9. Ying, Z. and Ho, W., to be published.Google Scholar
10. Ying, Z. and Ho, W., to be published.Google Scholar
11. The Si wafers were graciously furnished by Raymond Tung, AT&T Bell Laboratories.Google Scholar
12. Foord, J.S. and Jackman, R.B., Chem. Phys. Lett. 112, 190 (1984); J. Opt. Soc. Am. B 3, 806 (1986); Surf. Sci. 171, 197 (1986).Google Scholar
13. Creighton, J.R., J. Appl. Phys. 59, 410 (1986).Google Scholar
14. Ho, P. and White, J.M., Surf. Sci. 137, 103 (1984); J.S. Villarrubia, L.J. Richter, B.A. Gurney, and W. Ho, J. Vac. Sci. Technol. A 4, 1487 (1986).CrossRefGoogle Scholar
15. Gray, H.B. and Beach, N.A., J. Am. Chem. Soc. 85, 2922 (1963); D.K. Flynn, J.I. Steinfeld, and D.S. Sethi, J. Appl. Phys. 59, 3914 (1986).Google Scholar
16. Herzberg, G. and Scheibe, G., Z. Physik. Chem. (Leipzig) B 7, 390 (1930); A.J. Harrison, B.J. Cederholm, and M.A. Terwilliger, J. Chem. Phys. 30, 355 (1959).Google Scholar
17. Marmo, F.F., J. Opt. Soc. Am. 43, 1186 (1953); G.W. Bethke, J. Chem. Phys. 31, 662 (1959); R. Grajower and J. Jortner, J. Am. Chem. Soc. 85, 512 (1963).Google Scholar
18. Philipp, H.R. and Taft, E.A., Phys. Rev. 120, 37 (1960); W.C. Dash and R. Newman, Phys. Rev. 99, 1151 (1955).Google Scholar