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Isothermal Stress Relaxation In Al, AlCu and AlVPd Films

Published online by Cambridge University Press:  15 February 2011

J. P. Lokker ,
J. F. Jongste ,
G. C. A. M. Janssen  and
S. Radelaar
J. P. Lokker
Affiliation:
DIMES, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The NetherlandsLokker @ Dimes.tudelft.nl
J. F. Jongste
Affiliation:
DIMES, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The NetherlandsLokker @ Dimes.tudelft.nl
G. C. A. M. Janssen
Affiliation:
DIMES, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The NetherlandsLokker @ Dimes.tudelft.nl
S. Radelaar
Affiliation:
DIMES, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The NetherlandsLokker @ Dimes.tudelft.nl
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Abstract

Mechanical stress and its relaxation in aluminum metallization in integrated circuits (IC) are a major concern for the reliability of the material. It is known that adding Cu improves the reliability but complicates plasma etching and increases corrosion sensitivity. The mechanical behavior of AIVPd, AlCu and Al blanket films is investigated by wafer curvature measurements. During thermal cycling between 50°C and 400°C the highest tensile stress is found in AIVPd. In a subsequent experiment, the cooling was interrupted at several temperatures to investigate the stress behavior during an eight hour isothermal treatment. Isothermal stress relaxation has been observed in the three types of films and is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 513
Copyright
Copyright © Materials Research Society 1996

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