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Interfacial Solid-State Oxidation Reactions In The Sn-Doped In2O3 On Si And Si0.85Ge0.15 Alloy Systems
Published online by Cambridge University Press: 15 February 2011
Abstract
We have experimentally demonstrated that the interface between ITO and Si or Si0.85Ge0.15 is metastable, with silicon reducing ITO to form an amorphous oxide layer and In metal. A 400nm-thick ITO layer was deposited on two types of substrates: p-type, <100> silicon wafers and a silicon wafer with a 400nm-thick layer of Si0.85Ge0.15 grown by CVD. Annealing of the ITO/Si system resulted in the growth of a 5nm-thick planar, interfacial SiO2 layer and the formation of In metal in the ITO above the SiO2 layer. In contrast, annealing of the ITO/Si0.85Ge0.15 system produced an interfacial Si0.85Ge0.15O2 layer that was non-uniform in thickness and which had a non-planar surface morphology. As-deposited and annealed samples were characterized by HREM, EDS, and C-V measurements. Thermodynamic and kinetic arguments predicted both of the different reaction paths that were observed in the two systems.
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- Copyright © Materials Research Society 1994