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Interaction Between Deposited Film Extrinsic Gettering and Intrinsic Gettering in CZ Silicon During Simulated CMOS Process Cycles

Published online by Cambridge University Press:  28 February 2011

S. Hahn ,
C.-C. D. Wong ,
F. A. Ponce  and
Z. U. Rek
S. Hahn
Affiliation:
Siltec Corporation, Mountain View, California 94043
C.-C. D. Wong
Affiliation:
IDT, Santa Clara, CA 95051
F. A. Ponce
Affiliation:
Xerox PARC, Palo Alto, CA 94304
Z. U. Rek
Affiliation:
SSRL, Stanford, CA 94304
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Abstract

The gettering effectiveness of various thin film structures on n-type CZ silicon wafers has been investigated using electron microscopy, synchrotron radiation topography and optical techniques. Polysilicon, silicon nitride, and poly/nitride films were deposited on etched wafer backsurfaces. The various materials characteristics were correlated with gate oxide breakdown voltage, minority carrier lifetime and yield of MOS capacitors. These studies show that the poly/nitride configuration is superior as a gettering technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 353
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Takano, Y., Kozuka, H., Ogirima, M. and Maki, M., in “Semiconductor Silicon 1981”, Huff, H. R., Kriegler, R. J. and Takeishi, Y., eds. (Electrochem. Soc. Pennington, 1981) p. 743.Google Scholar
2. Chen, M. C., Lee, J. V. and Wu, H. J., J. Electrochem. Soc., Ext. Abstracts 81–1, 800 (1981).Google Scholar
3. Chen, M. C. and Silvestri, V. J., J. Electrochem. Soc. 129, 1294 (1982).Google Scholar
4. Stacy, W. T., Arst, M. C., Ritz, K. N., de Groot, J. G. and Norcott, M. H., “Defects in Silicon,” Bullis, W. M. and Kimerling, L. C., eds., Proceedings of the Electrochemical Society, Vol. 83–9, 423 (1983).Google Scholar
5. Yang, K. H. and Tan, T. Y., Materials Research Society Symposium, Proceedings Vol. 36, Materials Research Society (1985), p. 223.Google Scholar
6. Annual Report on Computer-Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices (April 1, 1984-March 31, 1985), DARPA Order No. 3709, Integrated Circuits Lab, Stanford University, Chapter 6.Google Scholar