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In-situ Rapid Isiheial Pocessing of Thin Epitaxial Dieleciric Films on Silicon and Compound Semi Semiconductors

Published online by Cambridge University Press:  28 February 2011

R. Singh ,
F. Radpour ,
J. Narayan ,
S. P. Joshi ,
M. Rahati ,
S. Anandakugan  and
S. K. Kahng
R. Singh
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019
F. Radpour
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019
J. Narayan
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019
S. P. Joshi
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019
M. Rahati
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019
S. Anandakugan
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019
S. K. Kahng
Affiliation:
School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK 73019
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Abstracr

We have developed a new rapid isothermal processing technique for the deposition of epitaxial dielectric films (II–VIa fluorides and their mixtures) on silicon and ccmpound semiconductors. In this process, epitaxial dielectric films are deposited in an e-beam system at room teqperature and subsequently subjected to in-situ rapid isothermal annealing by using incoherent light sources incorporated in the e-beam system. Epitaxial dielectric films of CaF2 and CaxS1−xF2 have been deposited on Si, GaAs and InP. In this paper, prelimilifty results of electrical and structural characteristics of. epitaxial dielectric films on Si and cupourd semiconductors are presented.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 681
Copyright
Copyright © Materials Research Society 1987

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References

1. Farrow, R.F.C., Sullivan, P.W., Williams, G.M., Jones, G.R. and Cameron, D.C., J. Vac. Sci. Technol. 19, 415 (1981).Google Scholar
2. Schowalter, L.J. and Fathauer, R.W., J. Vac. Sci. and Technol. A4, 1026 (1986).Google Scholar
3. Kahng, S.K., Radpour, F. and Singh, R., Proc. 1986 Fall Workshop of Korea Science and Technology, Semi Conductor Division, Seoul, Korea, sponsored by Korean Federation of Science and Technology, Seoul, Korea, October 21–22, 1986, p. 61.Google Scholar
4. Singh, R., Materials Issues in Silicon Integrated Circuit Processing 1986, Edited by Wittmer, M., Stimell, J. and Strathman, M., MRS Symposia Proc., Vol. 71, 519 (1986).Google Scholar
5. Kern, W. and Puaotinen, D.A., RCA Review, 1, 187 (1970).Google Scholar
6. Shappir, J., Anis, A. and Pinsky, I., IEEE Trans. Electron Devices, ED–23, 442 (1986).Google Scholar
7. Phillips, J.M., Materials Issues in Silicon Integrated Circuit Processing 1986, Edited by Wittmer, M., Stimmell, J. and Strathman, M., MRS Symposia Proc., Vol.71, 97 (1986).CrossRefGoogle Scholar