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In-plane Thermal Conductivity Determination in Silicon on Insulator (SOI) Structures Through Thermoreflectance Measurements

Published online by Cambridge University Press:  01 February 2011

Max S Aubain  and
Prabhakar Bandaru
Max S Aubain
Affiliation:
[email protected], University of California-San Diego, Mechanical Engineering Department, Materials Science and Engineering Program, La Jolla, California, United States
Prabhakar Bandaru
Affiliation:
[email protected], University of California-San Diego, Mechanical Engineering Department, Materials Science and Engineering Program, La Jolla, California, United States
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Abstract

Heat dissipation in Silicon-On-Insulator (SOI) based microdevices is hindered in the silicon device layer by the low thermal conductivity of the neighboring oxide and reduced in-plane thermal conductivity in very thin layers. This work shows that the in-plane thermal conductivity of a 260 nm thick device layers in SOI substrates can be characterized by measuring the temperature distributions induced by AC joule heating through microfabricated heaters by a scanning thermoreflectance technique. These data were fitted to numerical solutions of the heat conduction equation calculated using COMSOL® Multiphysics modeling software, suggesting the in-plane thermal conductivity of the device layer is reduced to 90±10 W/(m.K), which is consistent with phonon boundary scattering theory predictions.

Keywords

thermal conductivitySithin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1267: Symposium DD – Thermoelectric Materials 2010-Growth, Properties, Novel Characterization Methods and Applications , 2010 , 1267-DD12-01
Copyright
Copyright © Materials Research Society 2010

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