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InGaAs-InP Quantum Wire Stark Effect Modulators: Effect of Wire Width in the Optimization of Changes in Excitonic Absorption and Index of Refraction

Published online by Cambridge University Press:  21 March 2011

M. Xu ,
W. Huang  and
F. Jain
M. Xu
Affiliation:
Microsoft Corp., 15400 NE 13th Pl, Bellevue, WA 98007
W. Huang
Affiliation:
Electrical Engineering and Computer Science Department United State Military Academy, West Point, NY 10996
F. Jain
Affiliation:
Department of Electrical and Computer EngineeringUniversity of Connecticut, Storrs, CT 06269-2157
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Abstract

Quantum wire/dot modulators offer superior performance over their quantum well counterpart due to enhanced excitonic binding energy. This paper presents simulations on InGaAs-InP quantum wire Stark effect optical modulators showing a novel trend. While the excitonic binding energies and absorption coefficients increase as the width of the wire is decreased, the refractive index change Δn is maximized at a wire width depending on the magnitude of the applied electric field. For example, Δn is maximized at a width of about 100Å for an external electric field of 120kV/cm in an InGaAs quantum wire. This behavior is explained by considering the opposing effects of the wire width on binding energy and changes in the electron-hole overlap function in the presence of an external electric field. Practical InGaAs-InP modulators using V-groove structures are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 667: Symposium G – Luminescence and Luminescent Materials , 2001 , G6.9
Copyright
Copyright © Materials Research Society 2001

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References

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